ULTRA HIGH VACUUM E-BEAM EVAPORATION
System Overview
- Able to handle up to 8” wafers size
- For deposition metals, dielectrics, super-lattices, alloys
- Substrate heating up to 800°C capable of being heated in an O2 environment
- Crystal deposition controller for co-deposition
Targets
SiO2, Pt, Al, Au, Ti, TiN, Pd,Ag
Technical specifications
- Chamber size: 36″ high x 24″ ID
- 10 kW High Voltage Power Supplies for e-beam source Dual-beam covering 4 crucibles for co-deposition and multi-layer deposition
- Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
- Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
- PID temperature controller for substrate with +/- 1 degree C temperature stability
- Build in RGA
Location: E6-01-01, Class 1000 cleanroom
Contact: e6nanofab@nus.edu.sg