High temperature annealing for various materials

Technical specifications

• Wafer size: up to 8” wafer
• Temperature up to 1050 degC
• Ramp rate up to 300degC/sec
• 6 individual controllable thermal zone by infrared lamp
• Heat uniformity +/-2C for 8 inch wafer 1000C
• Anneal in N2, O2
• Annealing under vacuum environment (10e-6 torr)

Location: E6-01-01

Contact: e6nanofab@nus.edu.sg