Raith EBPG5200

Technical specifications:

• Small pieces to 200mm (8 inch) wafers.
• 7″ x 7″ mask plates.
• High KV for high aspect ratio nanostructures.
• Line width smaller than 8nm.
• 20 – 100kV beam energy.
   

Location: E6-01-01 Cleanroom

Contact: e6nanofab@nus.edu.sg