PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) System Overview Handle up to 8” wafers sizeHigh density film deposition of Oxide, Nitride and amorphous SiStress controlled SiN process240mm diameter resistance heated aluminium electrode fortemperatures up to 400°C, groundedElectrical chamber wall heating up to 80°C minimizingchamber wall depositionTarget: SiN, SiO2, Si Location: E6-05-09, CleanroomContact: e6nanofab@nus.edu.sg