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PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD)

System Overview

  • Handle up to 8” wafers size
  • High density film deposition of Oxide, Nitride and amorphous Si
  • Stress controlled SiN process
  • 240mm diameter resistance heated aluminium electrode for
    temperatures up to 400°C, grounded
  • Electrical chamber wall heating up to 80°C minimizing
    chamber wall deposition

Target: SiN, SiO2, Si

 

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg