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PLASMA ASHER

System Overview

Plasma Asher uses oxygen plasma to remove photoresist from wafers.

 

Technical specifications

  • Capable to handle 200 mm wafers
  • Gas Flows: O2= 1000 – 2000 sccm. N2 – 100 –500 sccm
  • μ-wave Power: 2.45GHz, 1000 watt, continuously adjustable
  • Base pressure: ≤0.5 mtorr
  • Operating pressure: 0.5- 5 mtorr
  • IR temperature measurement outside chamber
  • Optical Endpoint Detector (based on plasma intensity signal)
  • Platen Temperature: 100° – 300° C
  • Uniformity within wafer: 2% – 5%
  • Wafer to Wafer: 2% – 4%
  • Ash Rate: min < 200Å – max ≥ 3 μm./min.

 

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg