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INTEGRATED ICP ETCH CLUSTERING SYSTEM

System Overview

The Integrated ICP Etch Cluster comprises Metal etch module, Dielectric etch module and III-V etch module. It is capable to handle 8” wafer with up to 8 mass flow controlled gas lines for each module.

1. THE METAL ETCH MODULE

  • Metal etch module (W, Al, AlN tested)
  • InP grating etch
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150 ºC – +400 ºC
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

2. DIELECTRIC MODULE

  • Standard gas line and MFC for nontoxic gases (SF6, Ar, O2, N2, C4F8, CHF3)
  • Bypassed gas line and MFC for toxic gas (Cl2)


3. III-V ETCH MODULE

  • Cryo-cooled/electrically heated etch lower electrode, working temperature:   -150ºC-+400 ºC
  • Rapid cooling from cryo to chiller mode, from 200°C to 20°C in 40 minutes
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, H2, CH4)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

 

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg