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FIB-SEM

System Overview

  • Process viewing Cut & See
  • Failure analysis


Technical Specifications

  • Up to 8” wafer inspection in both SESM as in FIB operation enable by the new triple lens design
  • Max Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
  • Integrated TOF-SIMS with a compact TOFSIMS dector and uses FIB column as primary ion beam with 3D compositional analysis
  • Magnification at 30kV: 4x-1,000,000x
  • Maximum Field of View: 4.3 mm at WD; analytical 5 mm; 7.5 mm at WD 30mm
  • Electron Beam Energy: 200 eV to 30 keV down to 50eV with Beam Deceleration mode
  • FIB Resolution : <2.5nm at 30kV (at SEM-FIB coincidence point)
  • Accelerating voltage: 0.5 kV to 30 kV
  • Ion Gun : Ga Liquid Metal Ion Source
  • Probe Current: 1 pA to 50 nA
  • FIB angle: 55 degree
  • Gas injection system : Tungsten and Platinum
  • Model: TESCAN GAIA3

                            Quality of Patterned Resist

         

       

       

 

 Location: E6-03-02, Metrology

 Contact: e6nanofab@nus.edu.sg