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ATOMIC LAYER DEPOSITION (ALD)

ATOMIC LAYER DEPOSITION (ALD)

  • Deposition of Metal Nitrides, Oxides and sulphides
  • Up to 8” wafers size
  • Deposition uniformity:
    > Thermal Al2O3 – 1.5%
    > Plasma enhanced Al2O3 – 1.5%
  • High aspect ratio depositions:
    > Thermal – up to 2000:1
    > Plasma enhanced – up to 50:1
  • Target: Al2O3, HfO, ZrO and TiN
    
     

 

Location: E6-05-09, Cleanroom

Contact:  e6nanofab@nus.edu.sg