System Overview

Plasma Asher uses oxygen plasma to remove photoresist from wafers.

Technical specifications

• Capable to handle 200 mm wafers
• Gas Flows: O2= 1000 – 2000 sccm. N2 – 100 –500 sccm
• μ-wave Power: 2.45GHz, 1000 watt, continuously adjustable
• Base pressure: ≤0.5 mtorr
• Operating pressure: 0.5- 5 mtorr
• IR temperature measurement outside chamber
• Optical Endpoint Detector (based on plasma intensity signal)
• Platen Temperature: 100° – 300° C
• Uniformity within wafer: 2% – 5%
• Wafer to Wafer: 2% – 4%
• Ash Rate: min < 200Å – max ≥ 3 μm./min.

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg