System Overview

The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.

Technical specifications:

• 50 & 100kV beam energy
• Electron beam current 50 pA – 200 nA
• Thermal field emission source
• 1.9 nm Gaussian beam size at 100 KV
• Automated aperture change
• 1mmx1mm deflection field size
• 100 MHz pattern generator frequency
• Stage has 210mm X-Y travel and 10mm Z travel
• 1.5 Å accuracy on stage location
• External alignment microscope
• Proximity correction
• Small pieces to 200mm (8 inch) wafers
• 7″ x 7″ mask plates
• Resolution: < 8nm line width @100 kV with 100 μm field size
• Stitching Accuracy: <±10 nm @100 kV with 100 μm field size
• Overlay accuracy: <±10 nm @100 kV with 100 μm field size

Location: E6-01-01 Cleanroom, Class 10

Contact: e6nanofab@nus.edu.sg