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Molecular Beam Epitaxy (MBE) System for the Growth of a Range of Group III-V/II-IV Materials

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications

  • Available Material for Group IV: Si, C, Ge, Sn.
  • Transition metal targets: Mo, W, Pt, Zr, Hf.
  • Chalcogen targets: S, Se, Te.
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately
    7.5 x 10-11 Torr
  • Substrate up to handle 2″ wafer,
  • Heating up to 1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90 mm diameter; bakeable up to 200 ºC


Location: 
E6-06-01

Contact: e6nanofab@nus.edu.sg